Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F07%3APU63797" target="_blank" >RIV/00216305:26210/07:PU63797 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature

Popis výsledku v původním jazyce

The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitoredby low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extragallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical v

Název v anglickém jazyce

Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature

Popis výsledku anglicky

The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitoredby low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extragallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical v

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/LC06040" target="_blank" >LC06040: Struktury pro nanofotoniku a nanoelektroniku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics: Condensed Matter

ISSN

0953-8984

e-ISSN

—

Svazek periodika

19

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

15

Strana od-do

016011-16025

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—