Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU132605" target="_blank" >RIV/00216305:26210/19:PU132605 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/19:00110403

Výsledek na webu

<a href="https://www.mdpi.com/2079-6412/9/7/416" target="_blank" >https://www.mdpi.com/2079-6412/9/7/416</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/coatings9070416" target="_blank" >10.3390/coatings9070416</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

Popis výsledku v původním jazyce

The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry of the samples using imaging spectroscopic reflectometry.

Název v anglickém jazyce

Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

Popis výsledku anglicky

The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry of the samples using imaging spectroscopic reflectometry.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/LO1411" target="_blank" >LO1411: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Coatings, MDPI

ISSN

2079-6412

e-ISSN

—

Svazek periodika

˙9

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

21

Strana od-do

1-21

Kód UT WoS článku

000478656200044

EID výsledku v databázi Scopus

—