Effect of Os doping on electrical properties of YMnO3 multiferroic perovskite-oxide compounds

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU135258" target="_blank" >RIV/00216305:26210/19:PU135258 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1369800118317979?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800118317979?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2018.11.036" target="_blank" >10.1016/j.mssp.2018.11.036</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of Os doping on electrical properties of YMnO3 multiferroic perovskite-oxide compounds

Popis výsledku v původním jazyce

In this study, YMnO3 (YMO) and osmium (Os) doped YMO (YMn1-xOsxO3 ) (x = 0.01, 0.05, 0.10) compounds were synthesized via conventional solid-state reaction and their frequency and temperature depended electrical properties were investigated by wide range dielectric/impedance spectrometer. Structural and chemical analysis of YMO and Os doped YMO powders were carried out using via scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS). Impedance measurement results revealed that only grain boundary relaxation peak observed for YMO and 1 mol% Os doped YMO whereas both grain boundary and grain relaxation peaks observed for 5 mol% and 10 mol% Os doped samples. It has been seen that resistivity of the YMO can be decreased via Os doping and we observed that 10 mol% Os doped sample has the lowest resistivity among the other samples. The activation energies of YMO and Os doped YMO compounds were calculated. The results showed that the activation energy values of studied compounds gradually decreased via increasing Os doping ratio. Moreover, it has been demonstrated that the grain boundaries have higher energies that the grains.

Název v anglickém jazyce

Effect of Os doping on electrical properties of YMnO3 multiferroic perovskite-oxide compounds

Popis výsledku anglicky

In this study, YMnO3 (YMO) and osmium (Os) doped YMO (YMn1-xOsxO3 ) (x = 0.01, 0.05, 0.10) compounds were synthesized via conventional solid-state reaction and their frequency and temperature depended electrical properties were investigated by wide range dielectric/impedance spectrometer. Structural and chemical analysis of YMO and Os doped YMO powders were carried out using via scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS). Impedance measurement results revealed that only grain boundary relaxation peak observed for YMO and 1 mol% Os doped YMO whereas both grain boundary and grain relaxation peaks observed for 5 mol% and 10 mol% Os doped samples. It has been seen that resistivity of the YMO can be decreased via Os doping and we observed that 10 mol% Os doped sample has the lowest resistivity among the other samples. The activation energies of YMO and Os doped YMO compounds were calculated. The results showed that the activation energy values of studied compounds gradually decreased via increasing Os doping ratio. Moreover, it has been demonstrated that the grain boundaries have higher energies that the grains.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN

1369-8001

e-ISSN

1873-4081

Svazek periodika

91

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

281-289

Kód UT WoS článku

000454537700039

EID výsledku v databázi Scopus

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