RTS in Quantum Dots: Experimental Set-up with Long-tim Stability and Magnetic Fields Compensation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39236" target="_blank" >RIV/00216305:26220/03:PU39236 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

RTS in Quantum Dots: Experimental Set-up with Long-tim Stability and Magnetic Fields Compensation

Popis výsledku v původním jazyce

Quantum dot (QD) structures have attracted much attention becuase of interest in not only the relevance of low-dimensional electron gas physics but alo future applications of high-density, low power, and highly functional integrated circuits. It is assumed that the RTS noise is induced by a primary process X3(t) which is represented by a charge carrier quantum transitions between trap energy level and conduction or valecne bands. The primary process X3(t) is in general a three state g - r process. A seecondary process Y(t) is represented by the current modulation. It has two discrete states (alpha, beta). An this case two states of the X3(t) process are transformed into one state of the measurable secondary Y(t) process. The probability density of the occupation times in the alpha state depends on electron emission constant from trap to conduction band. For beta state we have superposition of two exponential dependeces. First is given by a capture of electron form conduction band o

Název v anglickém jazyce

RTS in Quantum Dots: Experimental Set-up with Long-tim Stability and Magnetic Fields Compensation

Popis výsledku anglicky

Quantum dot (QD) structures have attracted much attention becuase of interest in not only the relevance of low-dimensional electron gas physics but alo future applications of high-density, low power, and highly functional integrated circuits. It is assumed that the RTS noise is induced by a primary process X3(t) which is represented by a charge carrier quantum transitions between trap energy level and conduction or valecne bands. The primary process X3(t) is in general a three state g - r process. A seecondary process Y(t) is represented by the current modulation. It has two discrete states (alpha, beta). An this case two states of the X3(t) process are transformed into one state of the measurable secondary Y(t) process. The probability density of the occupation times in the alpha state depends on electron emission constant from trap to conduction band. For beta state we have superposition of two exponential dependeces. First is given by a capture of electron form conduction band o

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Advanced Experimental Methods fo Noise Research in Nanoscale Electronic Devices. Abstracts Book.

ISBN

none

ISSN

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e-ISSN

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Počet stran výsledku

1

Strana od-do

22-22

Název nakladatele

CNRL

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

15. 8. 2003

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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