Statistics of Impact Ionization Processes in GaAsP P-N Junctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39254" target="_blank" >RIV/00216305:26220/03:PU39254 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Statistics of Impact Ionization Processes in GaAsP P-N Junctions

Popis výsledku v původním jazyce

In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocityhas the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge carrier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee wi

Název v anglickém jazyce

Statistics of Impact Ionization Processes in GaAsP P-N Junctions

Popis výsledku anglicky

In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocityhas the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge carrier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee wi

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F03%2F0621" target="_blank" >GA102/03/0621: Ireverzibilní procesy v elektroizolačních materiálech pro vysoké teploty</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 17th International Conference "Noise and Fluctuation" ICNF 2003

ISBN

80-239-1055-1

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

441-444

Název nakladatele

CNRL, s.r.o.

Místo vydání

Prague

Místo konání akce

Prague

Datum konání akce

18. 8. 2003

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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