Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00525120" target="_blank" >RIV/68378271:_____/20:00525120 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.jallcom.2020.153752" target="_blank" >https://doi.org/10.1016/j.jallcom.2020.153752</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2020.153752" target="_blank" >10.1016/j.jallcom.2020.153752</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC

Popis výsledku v původním jazyce

The bulk polycrystalline (pc) 3C SiC of n- and p-type have been studied by EPR, DC conductivity and photoconductivity (PC) methods. The energy level of the donor-like minority carrier traps located at the grain boundaries (GB) were obtained from measurements of DC conductivity and PC. The minority carrier traps assigned to C and Si dangling bonds were observed in the EPR spectra of n- and p-type pc-3C SiC. The persistent relaxation of PC was described by kinetic equations accounting the trapping, ionization, and recombination processes of non-equilibrium charge carriers. The main process responsible for the PC long-lived relaxation is trap-assisted electron-hole recombination in n-type pc-3C SiC and ionization of B acceptors, as well as the hole escape/capture at the B level in p-type pc-3C SiC. The differences in the PC relaxation process in n- and p-type pc-3C SiC were explained by the presence of the potential barrier at GB for the majority carriers capture in p-type pc-3C SiC.

Název v anglickém jazyce

Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC

Popis výsledku anglicky

The bulk polycrystalline (pc) 3C SiC of n- and p-type have been studied by EPR, DC conductivity and photoconductivity (PC) methods. The energy level of the donor-like minority carrier traps located at the grain boundaries (GB) were obtained from measurements of DC conductivity and PC. The minority carrier traps assigned to C and Si dangling bonds were observed in the EPR spectra of n- and p-type pc-3C SiC. The persistent relaxation of PC was described by kinetic equations accounting the trapping, ionization, and recombination processes of non-equilibrium charge carriers. The main process responsible for the PC long-lived relaxation is trap-assisted electron-hole recombination in n-type pc-3C SiC and ionization of B acceptors, as well as the hole escape/capture at the B level in p-type pc-3C SiC. The differences in the PC relaxation process in n- and p-type pc-3C SiC were explained by the presence of the potential barrier at GB for the majority carriers capture in p-type pc-3C SiC.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

—

Svazek periodika

823

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000514857400062

EID výsledku v databázi Scopus

2-s2.0-85077914814