Transport náboje v tlustých vrstvách na bázi polymerů
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52121" target="_blank" >RIV/00216305:26220/05:PU52121 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Charge Carrier Transport in Polymer-Based Thick Resistive Films
Popis výsledku v původním jazyce
We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuaators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structureis characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting g
Název v anglickém jazyce
Charge Carrier Transport in Polymer-Based Thick Resistive Films
Popis výsledku anglicky
We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuaators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structureis characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting g
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2005
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Capacitor and Resistor Technology
ISSN
0887-7491
e-ISSN
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Svazek periodika
2005
Číslo periodika v rámci svazku
10
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
6
Strana od-do
93-98
Kód UT WoS článku
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EID výsledku v databázi Scopus
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