Transport náboje a šum v tlustých vrstvách na bázi polymeru

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU58473" target="_blank" >RIV/00216305:26220/06:PU58473 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Charge carrier transport and noise in polymer based thick films

Popis výsledku v původním jazyce

We have studied thick film layers made from different polymer vehicles and three types of conducting particles - silver, carbon, graphite, and their mixture. We proposed the point contact model for the charge carrier transport in the polymer based thickfilm structures. The model is based on the assumption, that the charge transport is due to the electrons thermally emitted from a metallic grain and that their transfer to another grain has a main component given by ballistic transport [1] and tunneling[2] through the barrier between these two particles. Main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of our model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehi

Název v anglickém jazyce

Charge carrier transport and noise in polymer based thick films

Popis výsledku anglicky

We have studied thick film layers made from different polymer vehicles and three types of conducting particles - silver, carbon, graphite, and their mixture. We proposed the point contact model for the charge carrier transport in the polymer based thickfilm structures. The model is based on the assumption, that the charge transport is due to the electrons thermally emitted from a metallic grain and that their transfer to another grain has a main component given by ballistic transport [1] and tunneling[2] through the barrier between these two particles. Main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of our model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehi

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Zdroje šumu v polovodičových materiálech a součástkách</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

4th European Microelectronics and Packaging Symposium with Table-Top Exhibition - Proceedings

ISBN

961-91023-4-7

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

15-20

Název nakladatele

MIDEM

Místo vydání

Slovinsko

Místo konání akce

Terme Catez

Datum konání akce

21. 5. 2006

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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