Analýza Koncentrace a Pohyblivosti Děr Kadmium Telluridu

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU67897" target="_blank" >RIV/00216305:26220/07:PU67897 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of the CdTe Hole Concentration and the Hole Mobility

Popis výsledku v původním jazyce

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just afterthe temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the

Název v anglickém jazyce

Analysis of the CdTe Hole Concentration and the Hole Mobility

Popis výsledku anglicky

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just afterthe temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Diagnostika Schottkyho a studenoemisních katod pomocí elektronického šumu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

30th International Spring Seminar on Electronics Technology 2007

ISBN

978-973-713-174

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

86-87

Název nakladatele

Dan Pitica

Místo vydání

Cluj-Napoca, Romania

Místo konání akce

Cluj-Napoca

Datum konání akce

9. 5. 2007

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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