Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Popis výsledku v původním jazyce

Rapid Single Flux Quantum logics (RSFQ) based on superconducting NbN-TaXN-NbN Josephson junctions (SNS type), present strong advantages over Semiconductor based logics due to faster gates with much lower power dissipation. Thanks to high resistivity of TaXN sputtered barriers, Josephson junctions can operate at 9K in a relaxed cryogenic environment. In order to prepare a NbN ADC technology for space telecoms we have sputtered ~7nm thick TaXN barrier layer at 300 stupňů C showing the required insulator behaviour, low roughness with a large NbN electrodes critical temperature (Tc=15.5K). At 10K, Jc~10kA/cm2 and RnIc up to ~0.3 mV; Josephson behaviour is observed up to 14K. We are preparing a 10 to 15 photo-mask levels circuit technology to be ported in the Leti 200mm Si-MOS Fab. The advantages both in compactness, operating temperature and frequency (~200GHz clock) of self-shunted NbN junctions over Nb externally shunted ones is illustrated for a 1/64 frequency divider.

Název v anglickém jazyce

Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Popis výsledku anglicky

Rapid Single Flux Quantum logics (RSFQ) based on superconducting NbN-TaXN-NbN Josephson junctions (SNS type), present strong advantages over Semiconductor based logics due to faster gates with much lower power dissipation. Thanks to high resistivity of TaXN sputtered barriers, Josephson junctions can operate at 9K in a relaxed cryogenic environment. In order to prepare a NbN ADC technology for space telecoms we have sputtered ~7nm thick TaXN barrier layer at 300 stupňů C showing the required insulator behaviour, low roughness with a large NbN electrodes critical temperature (Tc=15.5K). At 10K, Jc~10kA/cm2 and RnIc up to ~0.3 mV; Josephson behaviour is observed up to 14K. We are preparing a 10 to 15 photo-mask levels circuit technology to be ported in the Leti 200mm Si-MOS Fab. The advantages both in compactness, operating temperature and frequency (~200GHz clock) of self-shunted NbN junctions over Nb externally shunted ones is illustrated for a 1/64 frequency divider.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

TIEF 2007

ISBN

978-80-214-3476-9

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

1-4

Název nakladatele

UTEE, FEKT VUT v Brně

Místo vydání

Paris

Místo konání akce

Paris

Datum konání akce

1. 7. 2007

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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