Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU82087" target="_blank" >RIV/00216305:26220/09:PU82087 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation

Popis výsledku v původním jazyce

This work deals with alternative method for mono-crystalline surface cleaning and activation by means of low pressure plasma-hydrogen etching. The gas mixture of Ar/H2 is used for etch process. Hydrogen plasma etching can removes native oxide layer veryefficiently and also it facilitates high-quality passivation effect due to the silicon surface hydrogenation. A reactive SiNx:H sputtering process follows after the plasma-hydrogen etching process using the Ar/N2/H2 gas mixture. Both etching and sputtering are performed in one vacuum cycle. The aim of such processing is in elimination of SiOX interlayer formation that could be created on the substrate can lead to formation of very thin SiOxNy layer on the silicon/layer interface after start of SiNx deposition. The Fourier infrared spectroscopy (FTIR) was used for binding ratio analysis within SiNx:H layers. The influence of plasma-hydrogen etching on the minority carrier lifetime was measured by MW-PCD method.

Název v anglickém jazyce

Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation

Popis výsledku anglicky

This work deals with alternative method for mono-crystalline surface cleaning and activation by means of low pressure plasma-hydrogen etching. The gas mixture of Ar/H2 is used for etch process. Hydrogen plasma etching can removes native oxide layer veryefficiently and also it facilitates high-quality passivation effect due to the silicon surface hydrogenation. A reactive SiNx:H sputtering process follows after the plasma-hydrogen etching process using the Ar/N2/H2 gas mixture. Both etching and sputtering are performed in one vacuum cycle. The aim of such processing is in elimination of SiOX interlayer formation that could be created on the substrate can lead to formation of very thin SiOxNy layer on the silicon/layer interface after start of SiNx deposition. The Fourier infrared spectroscopy (FTIR) was used for binding ratio analysis within SiNx:H layers. The influence of plasma-hydrogen etching on the minority carrier lifetime was measured by MW-PCD method.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

24th European Photovoltaic Solar Energy Conference and Exhibition

ISBN

3-936338-25-6

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

—

Název nakladatele

WIP-Renewable Energies

Místo vydání

Hamburg, Germany

Místo konání akce

Hamburg

Datum konání akce

20. 9. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

—