Investigation of excess 1/f noise in CdTe single crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87189" target="_blank" >RIV/00216305:26220/10:PU87189 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/10:10077654

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of excess 1/f noise in CdTe single crystals

Popis výsledku v původním jazyce

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis

Název v anglickém jazyce

Investigation of excess 1/f noise in CdTe single crystals

Popis výsledku anglicky

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

ISSN

0268-1242

e-ISSN

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Svazek periodika

2010(25)

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000276888900016

EID výsledku v databázi Scopus

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