Nízkofrekvenční šum a spektroskopie pastí v InGaAs/InAlAs heterostrukturách

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52172" target="_blank" >RIV/00216305:26220/05:PU52172 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures

Popis výsledku v původním jazyce

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 210-3, respectively, which is consistent with the 1/f energy partition fluctuations moddel. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy

Název v anglickém jazyce

Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures

Popis výsledku anglicky

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 210-3, respectively, which is consistent with the 1/f energy partition fluctuations moddel. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Research Bulletin of Meisei University - Physical Sciences and Engineering

ISSN

1346-7239

e-ISSN

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Svazek periodika

41

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

8

Strana od-do

147-154

Kód UT WoS článku

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EID výsledku v databázi Scopus

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