Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81197" target="_blank" >RIV/00216305:26220/09:PU81197 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Popis výsledku v původním jazyce

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Název v anglickém jazyce

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Popis výsledku anglicky

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Nízkofrekvenční šum v submikronových MOSFET a HEMT strukturách</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

AIP conference proceedings

ISSN

0094-243X

e-ISSN

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Svazek periodika

1129

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

000267057200044

EID výsledku v databázi Scopus

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