Memristor modeling based on its constitutive relation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU90063" target="_blank" >RIV/00216305:26220/10:PU90063 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60162694:G43__/10:00421650

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Memristor modeling based on its constitutive relation

Popis výsledku v původním jazyce

Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. Theconstitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled

Název v anglickém jazyce

Memristor modeling based on its constitutive relation

Popis výsledku anglicky

Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. Theconstitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP102%2F10%2F1614" target="_blank" >GAP102/10/1614: Memristivní, memkapacitivní a meminduktivní systémy: základní výzkum, modelování a simulace</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the European Conference of Circuits Technology and Devices (ECCTD'10)

ISBN

978-960-474-250-9

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

—

Název nakladatele

NAUN

Místo vydání

Tenerife, Spain

Místo konání akce

Puerto De La Cruz, Tenerife

Datum konání akce

30. 11. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—