COMPARISON OF BEHAVIORS FOR DIFFERENT PECVD DIELECTRIC LAYERS FOR ARCHITECTURE APPLICATIONS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU97607" target="_blank" >RIV/00216305:26220/11:PU97607 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

COMPARISON OF BEHAVIORS FOR DIFFERENT PECVD DIELECTRIC LAYERS FOR ARCHITECTURE APPLICATIONS

Popis výsledku v původním jazyce

Demonstration of production of high efficient color crystalline silicon solar cells (for architecture application) is the main aim of this paper. Front side anti-reflective and passivation dielectric film (creating the required color) is designed as themultilayer stack of silicon nitride and silicon oxide. Both these layers are prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) with the target to keep as high as possible difference in the index of refraction resulting in sufficiently high optical reflection in the certain wavelength range. We calculated design (thicknesses) of various triple layer structures (SiNx, SiOx, SiNx) with the peak in optical reflection spectra over the whole visible range from 475 up to 675 nm. Finally we prepareda solar cells with one chosen multilayer stack of SiNx:H / SiOxNy:H / SiNx:H by nearly standard cell production sequence. Optical reflection of solar cells and quantum efficiency were measured. Reflection peak of incident light was found

Název v anglickém jazyce

COMPARISON OF BEHAVIORS FOR DIFFERENT PECVD DIELECTRIC LAYERS FOR ARCHITECTURE APPLICATIONS

Popis výsledku anglicky

Demonstration of production of high efficient color crystalline silicon solar cells (for architecture application) is the main aim of this paper. Front side anti-reflective and passivation dielectric film (creating the required color) is designed as themultilayer stack of silicon nitride and silicon oxide. Both these layers are prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) with the target to keep as high as possible difference in the index of refraction resulting in sufficiently high optical reflection in the certain wavelength range. We calculated design (thicknesses) of various triple layer structures (SiNx, SiOx, SiNx) with the peak in optical reflection spectra over the whole visible range from 475 up to 675 nm. Finally we prepareda solar cells with one chosen multilayer stack of SiNx:H / SiOxNy:H / SiNx:H by nearly standard cell production sequence. Optical reflection of solar cells and quantum efficiency were measured. Reflection peak of incident light was found

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the International Conference held in Hamburg, Germany

ISBN

3-936338-27-2

ISSN

—

e-ISSN

—

Počet stran výsledku

4800

Strana od-do

2298-2300

Název nakladatele

WIP

Místo vydání

Hamburg

Místo konání akce

Hamburg

Datum konání akce

5. 9. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—