Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103073" target="_blank" >RIV/00216305:26220/13:PU103073 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Popis výsledku v původním jazyce

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects inducedby wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for

Název v anglickém jazyce

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Popis výsledku anglicky

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects inducedby wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

WORLD JOURNAL OF ENGINEERING

ISSN

1708-5284

e-ISSN

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Svazek periodika

10

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CN - Čínská lidová republika

Počet stran výsledku

6

Strana od-do

119-124

Kód UT WoS článku

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EID výsledku v databázi Scopus

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