Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU106616" target="_blank" >RIV/00216305:26220/14:PU106616 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.hrpub.org/journals/jour_info.php?id=49" target="_blank" >http://www.hrpub.org/journals/jour_info.php?id=49</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.13189/ujeee.2014.020103" target="_blank" >10.13189/ujeee.2014.020103</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Popis výsledku v původním jazyce

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera withthose methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Název v anglickém jazyce

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Popis výsledku anglicky

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera withthose methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Universal Journal of Electrical and Electronic Engineering

ISSN

2332-3299

e-ISSN

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Svazek periodika

2

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

18-22

Kód UT WoS článku

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EID výsledku v databázi Scopus

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