Optimization of Surface Texturing in the Solar Cells Production

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of Surface Texturing in the Solar Cells Production

Popis výsledku v původním jazyce

This article deals with implementation of the Atomic Force Microscopy (AFM) Atomic Force Microscopy to characterisation process of crystalline silicon solar cells texture. Aim of this work was to create methodology for surface evaluation in terms of optimization of texturing process in solar cells mass-production. A detailed description of surface structure is based on inspection of roughness parameters. When monitoring surface properties the AFM method has clear advantages compared to optical microscopy. Silicon substrates used in experiment were etched in strong and weak alkaline as well as in in acid solutions. Set pProcess conditions and etching solution composition affect quality of created structure very significantly ? especially texture depth,size of etched objects and amount of underetching. To obtain clear depiction of final surface structure the size of scanned area was 50 x 50 um. The shape and the depth analysis of etched objects were completed by root mean square deviati

Název v anglickém jazyce

Optimization of Surface Texturing in the Solar Cells Production

Popis výsledku anglicky

This article deals with implementation of the Atomic Force Microscopy (AFM) Atomic Force Microscopy to characterisation process of crystalline silicon solar cells texture. Aim of this work was to create methodology for surface evaluation in terms of optimization of texturing process in solar cells mass-production. A detailed description of surface structure is based on inspection of roughness parameters. When monitoring surface properties the AFM method has clear advantages compared to optical microscopy. Silicon substrates used in experiment were etched in strong and weak alkaline as well as in in acid solutions. Set pProcess conditions and etching solution composition affect quality of created structure very significantly ? especially texture depth,size of etched objects and amount of underetching. To obtain clear depiction of final surface structure the size of scanned area was 50 x 50 um. The shape and the depth analysis of etched objects were completed by root mean square deviati

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EDS 14 Imaps Cs International Conference Proceedings

ISBN

978-80-214-4985-5

ISSN

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e-ISSN

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Počet stran výsledku

150

Strana od-do

11-14

Název nakladatele

Vysoké učení technické v Brně

Místo vydání

Neuveden

Místo konání akce

Brno

Datum konání akce

25. 6. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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