Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU126269" target="_blank" >RIV/00216305:26220/17:PU126269 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

Popis výsledku v původním jazyce

Variety types of microstructural surface defects could have impact on performance of the whole solar cell. This paper deals with several diagnostic methods for defect detection, localization and isolation. A combination of I-V measurement in dark conditions, visible and near infrared electroluminescence were used for macroscale localization. Microscale localization were done by scanning probe microscope (SPM) with a photomultiplier tube detector (shadow mapping) and scanning electron microscope (SEM). Defect isolation were performed by focused ion beam (FIB) milling. Solar cell performance efficiency between before and after milling process is investigated by non-destructive I-V measurement under defined light conditions. Monocrystalline silicon solar cell samples have area 10x10 mm2 and area of defects is in order of micrometers, so investigation includes following steps. First of all, I-V measurement under reverse biased samples provides information about presence of defect. Rough localization of t

Název v anglickém jazyce

Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

Popis výsledku anglicky

Variety types of microstructural surface defects could have impact on performance of the whole solar cell. This paper deals with several diagnostic methods for defect detection, localization and isolation. A combination of I-V measurement in dark conditions, visible and near infrared electroluminescence were used for macroscale localization. Microscale localization were done by scanning probe microscope (SPM) with a photomultiplier tube detector (shadow mapping) and scanning electron microscope (SEM). Defect isolation were performed by focused ion beam (FIB) milling. Solar cell performance efficiency between before and after milling process is investigated by non-destructive I-V measurement under defined light conditions. Monocrystalline silicon solar cell samples have area 10x10 mm2 and area of defects is in order of micrometers, so investigation includes following steps. First of all, I-V measurement under reverse biased samples provides information about presence of defect. Rough localization of t

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů