Influence of localized structure defects on the pn junction properties
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105099" target="_blank" >RIV/00216305:26220/13:PU105099 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Influence of localized structure defects on the pn junction properties
Popis výsledku v původním jazyce
Local defects in the solar cell structures evidently affect electrical and photoelectrical properties of the cells. These local defects can be microfractures, precipitates and other material structure inhomogeneities. Localization of the defects in the structure and assigning particular defects with photoelectrical parameter deterioration is keypoint for solar cell lifetime and efficiency improvement. Although the breakdown can be evident in current-voltage plot, the localization on the sample has to been done by microscopic investigations and defects light emission measurement under electrical bias conditions. The defects structures are microscopically investigated in this paper. Moreover the experimental results obtained from samples where the defects were removed by focused ion beam are presented. Sample electrical and photoelectrical properties before and after milling are discussed.
Název v anglickém jazyce
Influence of localized structure defects on the pn junction properties
Popis výsledku anglicky
Local defects in the solar cell structures evidently affect electrical and photoelectrical properties of the cells. These local defects can be microfractures, precipitates and other material structure inhomogeneities. Localization of the defects in the structure and assigning particular defects with photoelectrical parameter deterioration is keypoint for solar cell lifetime and efficiency improvement. Although the breakdown can be evident in current-voltage plot, the localization on the sample has to been done by microscopic investigations and defects light emission measurement under electrical bias conditions. The defects structures are microscopically investigated in this paper. Moreover the experimental results obtained from samples where the defects were removed by focused ion beam are presented. Sample electrical and photoelectrical properties before and after milling are discussed.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
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Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů