Isolation and optoelectronic characterization of Si solar cells microstructure defects

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU130447" target="_blank" >RIV/00216305:26220/18:PU130447 - isvavai.cz</a>

Výsledek na webu

<a href="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009" target="_blank" >http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1742-6596/1124/4/041009" target="_blank" >10.1088/1742-6596/1124/4/041009</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Isolation and optoelectronic characterization of Si solar cells microstructure defects

Popis výsledku v původním jazyce

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

Název v anglickém jazyce

Isolation and optoelectronic characterization of Si solar cells microstructure defects

Popis výsledku anglicky

This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics: Conference Series

ISSN

1742-6588

e-ISSN

1742-6596

Svazek periodika

1124

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85060975663