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High-frequency floating memristor emulator and its experimental results

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU129512" target="_blank" >RIV/00216305:26220/19:PU129512 - isvavai.cz</a>

  • Výsledek na webu

    <a href="https://doi.org/10.1049/iet-cds.2018.5191" target="_blank" >https://doi.org/10.1049/iet-cds.2018.5191</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1049/iet-cds.2018.5191" target="_blank" >10.1049/iet-cds.2018.5191</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    High-frequency floating memristor emulator and its experimental results

  • Popis výsledku v původním jazyce

    In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.

  • Název v anglickém jazyce

    High-frequency floating memristor emulator and its experimental results

  • Popis výsledku anglicky

    In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    20201 - Electrical and electronic engineering

Návaznosti výsledku

  • Projekt

  • Návaznosti

    S - Specificky vyzkum na vysokych skolach

Ostatní

  • Rok uplatnění

    2019

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    IET Circuits, Devices and Systems

  • ISSN

    1751-858X

  • e-ISSN

    1751-8598

  • Svazek periodika

    13

  • Číslo periodika v rámci svazku

    3, IF: 1.277

  • Stát vydavatele periodika

    GB - Spojené království Velké Británie a Severního Irska

  • Počet stran výsledku

    11

  • Strana od-do

    292-302

  • Kód UT WoS článku

    000470680000004

  • EID výsledku v databázi Scopus

    2-s2.0-85066739590