High-frequency floating memristor emulator and its experimental results
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU129512" target="_blank" >RIV/00216305:26220/19:PU129512 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1049/iet-cds.2018.5191" target="_blank" >https://doi.org/10.1049/iet-cds.2018.5191</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1049/iet-cds.2018.5191" target="_blank" >10.1049/iet-cds.2018.5191</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
High-frequency floating memristor emulator and its experimental results
Popis výsledku v původním jazyce
In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.
Název v anglickém jazyce
High-frequency floating memristor emulator and its experimental results
Popis výsledku anglicky
In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
—
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2019
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
IET Circuits, Devices and Systems
ISSN
1751-858X
e-ISSN
1751-8598
Svazek periodika
13
Číslo periodika v rámci svazku
3, IF: 1.277
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
11
Strana od-do
292-302
Kód UT WoS článku
000470680000004
EID výsledku v databázi Scopus
2-s2.0-85066739590