Comparative performance study of multiple-input Bulk-driven and multiple-input Bulk-driven Quasi-floating-gate DDCCs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU132250" target="_blank" >RIV/00216305:26220/19:PU132250 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21460/19:00340707

Výsledek na webu

<a href="https://doi.org/10.1016/j.aeue.2019.06.003" target="_blank" >https://doi.org/10.1016/j.aeue.2019.06.003</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.aeue.2019.06.003" target="_blank" >10.1016/j.aeue.2019.06.003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparative performance study of multiple-input Bulk-driven and multiple-input Bulk-driven Quasi-floating-gate DDCCs

Popis výsledku v původním jazyce

This brief presents a comparative performance study of two recently presented techniques, the multiple-input bulk-driven (MI-BD) and the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistors (MOST). These techniques offer simplified CMOS structures of specific active elements and ensure near rail-to-rail operation capability under extremely low-voltage supply and reduced power consumption. However, to clarify the pros and cons of each technique, two Differential Difference Current Conveyors (DDCC) using MI-BD and MI-BD-QFG are compared. For the purpose of comparison, theoretical analysis such as small-signal model, open-loop gain, terminal resistances, gain bandwidth product, input referred thermal noise and maximum input range of the DDCCs are included. Furthermore, in order to provide a fair performance comparison both of the DDCCs is supplied with 0.4 V and consume same power 140 nW. The DDCCs were fabricated in a standard n-well 0.18 µm CMOS process from TSMC and hence the results are confirmed theoretically and experimentally.

Název v anglickém jazyce

Comparative performance study of multiple-input Bulk-driven and multiple-input Bulk-driven Quasi-floating-gate DDCCs

Popis výsledku anglicky

This brief presents a comparative performance study of two recently presented techniques, the multiple-input bulk-driven (MI-BD) and the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistors (MOST). These techniques offer simplified CMOS structures of specific active elements and ensure near rail-to-rail operation capability under extremely low-voltage supply and reduced power consumption. However, to clarify the pros and cons of each technique, two Differential Difference Current Conveyors (DDCC) using MI-BD and MI-BD-QFG are compared. For the purpose of comparison, theoretical analysis such as small-signal model, open-loop gain, terminal resistances, gain bandwidth product, input referred thermal noise and maximum input range of the DDCCs are included. Furthermore, in order to provide a fair performance comparison both of the DDCCs is supplied with 0.4 V and consume same power 140 nW. The DDCCs were fabricated in a standard n-well 0.18 µm CMOS process from TSMC and hence the results are confirmed theoretically and experimentally.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/LO1401" target="_blank" >LO1401: Interdisciplinární výzkum bezdrátových technologií</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

AEU - International Journal of Electronics and Communications

ISSN

1434-8411

e-ISSN

1618-0399

Svazek periodika

108

Číslo periodika v rámci svazku

, IF: 2.853

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

19-28

Kód UT WoS článku

000480670900003

EID výsledku v databázi Scopus

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