Design and Examples of Fractional-Order Capacitor Based on C-R-NC Layer Structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU149701" target="_blank" >RIV/00216305:26220/23:PU149701 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/ICUMT61075.2023.10333293" target="_blank" >http://dx.doi.org/10.1109/ICUMT61075.2023.10333293</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ICUMT61075.2023.10333293" target="_blank" >10.1109/ICUMT61075.2023.10333293</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Design and Examples of Fractional-Order Capacitor Based on C-R-NC Layer Structure

Popis výsledku v původním jazyce

The design method and examples of analog circuit elements with fractional (non-integer) order immittance of capacitive character are presented. The elements are based on distributed layer structures of the C-R-NC type (capacitive, resistive, capacitive with N-times the capacitance) and are therefore suitable for integrated implementation, e.g. using thick-film, thin-film, or metal-oxide-semiconductor (MOS) technology. The design method uses a genetic algorithm that optimizes the interconnections between and parameters of individual C-R-NC structures that form the resulting element. To calculate the fitness function for the algorithm, the admittance matrix of the C-R-NC structure and modified nodal analysis are used. Practical tests confirm the success of this method, especially for fractional orders between 0.5 and 1, where it was possible to design circuits working in a frequency band of around 4 decades with a maximum admittance phase deviation of 2 degrees.

Název v anglickém jazyce

Design and Examples of Fractional-Order Capacitor Based on C-R-NC Layer Structure

Popis výsledku anglicky

The design method and examples of analog circuit elements with fractional (non-integer) order immittance of capacitive character are presented. The elements are based on distributed layer structures of the C-R-NC type (capacitive, resistive, capacitive with N-times the capacitance) and are therefore suitable for integrated implementation, e.g. using thick-film, thin-film, or metal-oxide-semiconductor (MOS) technology. The design method uses a genetic algorithm that optimizes the interconnections between and parameters of individual C-R-NC structures that form the resulting element. To calculate the fitness function for the algorithm, the admittance matrix of the C-R-NC structure and modified nodal analysis are used. Practical tests confirm the success of this method, especially for fractional orders between 0.5 and 1, where it was possible to design circuits working in a frequency band of around 4 decades with a maximum admittance phase deviation of 2 degrees.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA23-06070S" target="_blank" >GA23-06070S: Základní výzkum v návrhu CMOS prvků fraktálního řádu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 2023 15th International Congress on Ultra Modern Telecommunications and Control Systems and Workshops (ICUMT), Ghent, Belgium

ISBN

979-8-3503-9328-6

ISSN

—

e-ISSN

—

Počet stran výsledku

6

Strana od-do

91-96

Název nakladatele

Neuveden

Místo vydání

neuveden

Místo konání akce

Gent, Belgium

Datum konání akce

30. 10. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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