Optimization of Tungsten Anodization for Thin WO₃ Layers for Aplication in Cold Field Emission Cathodes
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU154774" target="_blank" >RIV/00216305:26220/24:PU154774 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Optimization of Tungsten Anodization for Thin WO₃ Layers for Aplication in Cold Field Emission Cathodes
Popis výsledku v původním jazyce
This study focuses on optimizing the anodization process for producing high-quality tungsten oxide (WO₃) layers on tungsten substrates to enhance cold field emission (CFE) cathode performance. Tungsten samples were anodized in a 0.3 M H₃PO₄ electrolyte solution, with voltage and duration systematically varied to control oxide layer thickness, roughness, and chemical composition. Advanced surface characterization techniques, including XPS, AFM, and SEM, were used to evaluate the layers. Results indicate that anodization at 7.5–12.5 V for 10 minutes yields WO₃-rich layers with low roughness, suitable for stable dielectric barriers to improve electron tunneling. These findings support the potential of anodized WO₃ layers in high-performance CFE applications.
Název v anglickém jazyce
Optimization of Tungsten Anodization for Thin WO₃ Layers for Aplication in Cold Field Emission Cathodes
Popis výsledku anglicky
This study focuses on optimizing the anodization process for producing high-quality tungsten oxide (WO₃) layers on tungsten substrates to enhance cold field emission (CFE) cathode performance. Tungsten samples were anodized in a 0.3 M H₃PO₄ electrolyte solution, with voltage and duration systematically varied to control oxide layer thickness, roughness, and chemical composition. Advanced surface characterization techniques, including XPS, AFM, and SEM, were used to evaluate the layers. Results indicate that anodization at 7.5–12.5 V for 10 minutes yields WO₃-rich layers with low roughness, suitable for stable dielectric barriers to improve electron tunneling. These findings support the potential of anodized WO₃ layers in high-performance CFE applications.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
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OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
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Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů