Versatile Dual-Gate 2D Transistor for Logic-in-Memory and Neuromodulation Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0199884" target="_blank" >RIV/00216305:26220/26:0199884 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/smll.202503991" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/smll.202503991</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/smll.202503991" target="_blank" >10.1002/smll.202503991</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Versatile Dual-Gate 2D Transistor for Logic-in-Memory and Neuromodulation Applications

Popis výsledku v původním jazyce

Van der Waals heterostructure devices integrating memory and processing functions have been explored to overcome the von Neumann bottleneck. While most of these devices support logic or neuromorphic functionalities, few have demonstrated combined memory, logic, and neuromodulation capabilities. In this work, a dual-gate van der Waals heterostructure floating-gate field-effect transistor with access regions is presented, utilizing molybdenum disulfide as the channel, hexagonal boron nitride as the insulating and tunneling layers, and graphene as the floating gate, that seamlessly integrates memory, logic, and neuromorphic functions in a single device. The transistor exhibits robust memory characteristics, including a large memory window (133 V), excellent retention (approximate to 10 000 s), and high endurance (>500 cycles). Leveraging its dual-gate architecture, the device demonstrates reconfigurable two-input logic OR and NOT operations, with tunable gain for NOT logic. The device also emulates key synaptic plasticity mechanisms, including spike-amplitude, spike-number, and spike-duration dependence. Notably, the top gate acts as a modulatory neuron, where positive and negative voltages amplify or suppress synaptic responses, respectively. By integrating memory, logic, and neuromodulation in a single device, this van der Waals heterostructure provides a versatile, energy-efficient platform for in-memory logic and neuromorphic applications.

Název v anglickém jazyce

Versatile Dual-Gate 2D Transistor for Logic-in-Memory and Neuromodulation Applications

Popis výsledku anglicky

Van der Waals heterostructure devices integrating memory and processing functions have been explored to overcome the von Neumann bottleneck. While most of these devices support logic or neuromorphic functionalities, few have demonstrated combined memory, logic, and neuromodulation capabilities. In this work, a dual-gate van der Waals heterostructure floating-gate field-effect transistor with access regions is presented, utilizing molybdenum disulfide as the channel, hexagonal boron nitride as the insulating and tunneling layers, and graphene as the floating gate, that seamlessly integrates memory, logic, and neuromorphic functions in a single device. The transistor exhibits robust memory characteristics, including a large memory window (133 V), excellent retention (approximate to 10 000 s), and high endurance (>500 cycles). Leveraging its dual-gate architecture, the device demonstrates reconfigurable two-input logic OR and NOT operations, with tunable gain for NOT logic. The device also emulates key synaptic plasticity mechanisms, including spike-amplitude, spike-number, and spike-duration dependence. Notably, the top gate acts as a modulatory neuron, where positive and negative voltages amplify or suppress synaptic responses, respectively. By integrating memory, logic, and neuromodulation in a single device, this van der Waals heterostructure provides a versatile, energy-efficient platform for in-memory logic and neuromorphic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Small

ISSN

1613-6810

e-ISSN

1613-6829

Svazek periodika

—

Číslo periodika v rámci svazku

2503991

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

11

Strana od-do

1-11

Kód UT WoS článku

001523608300001

EID výsledku v databázi Scopus

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