Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932225" target="_blank" >RIV/60461373:22310/25:43932225 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.nature.com/articles/s41928-025-01379-1" target="_blank" >https://www.nature.com/articles/s41928-025-01379-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41928-025-01379-1" target="_blank" >10.1038/s41928-025-01379-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics

Popis výsledku v původním jazyce

Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal-oxide-semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric and molybdenum disulfide (MoS2) as a semiconductor layer. The ZrO2-x/MoS2 heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm2 V-1 s-1 and current on/off ratio of up to 106. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 x 104. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 105 A W-1, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array.

Název v anglickém jazyce

Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics

Popis výsledku anglicky

Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal-oxide-semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric and molybdenum disulfide (MoS2) as a semiconductor layer. The ZrO2-x/MoS2 heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm2 V-1 s-1 and current on/off ratio of up to 106. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 x 104. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 105 A W-1, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20200 - Electrical engineering, Electronic engineering, Information engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Electronics

ISSN

2520-1131

e-ISSN

2520-1131

Svazek periodika

8

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

461-473

Kód UT WoS článku

001482002800001

EID výsledku v databázi Scopus

2-s2.0-105004359772