Resistant Gates for Polymorphic Electronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26230%2F14%3APU112058" target="_blank" >RIV/00216305:26230/14:PU112058 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.fit.vutbr.cz/research/pubs/all.php?id=10726" target="_blank" >http://www.fit.vutbr.cz/research/pubs/all.php?id=10726</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/EMS.2014.45" target="_blank" >10.1109/EMS.2014.45</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Resistant Gates for Polymorphic Electronics

Popis výsledku v původním jazyce

The field of electronics is exposed to emergence of advanced materials with semiconducting properties as a perspective replacement for conventional silicon technology. These materials may comprise, for example, organic semiconductors. Number of interesting properties, such as ambipolarity, are usually observed. It's possible to imagine a transistor which can work under certain conditions in a P-channel mode whereas it achieves N-channel mode of conductivity in a different situation. This particular type of transistor with ambipolar behavior turns out to be useful for development of polymorphic electronics. Its notion tends to simplify design procedure of complex digital circuits and it may also bring an additional features for a given application scenario. In fact, this is helpful especially in those situations when it's necessary to change the target environment where the device with polymorphic circuit blocks is required to be operating. For example, a solar power plant control circuit will have a different functions during the daylight period and at night. The important characteristics is that its physical structure still remains to be the same. Above all, the impact of ambipolar property coupled with adoption of the emerging materials opens up a new direction for physical realization of the polymorphic building blocks.

Název v anglickém jazyce

Resistant Gates for Polymorphic Electronics

Popis výsledku anglicky

The field of electronics is exposed to emergence of advanced materials with semiconducting properties as a perspective replacement for conventional silicon technology. These materials may comprise, for example, organic semiconductors. Number of interesting properties, such as ambipolarity, are usually observed. It's possible to imagine a transistor which can work under certain conditions in a P-channel mode whereas it achieves N-channel mode of conductivity in a different situation. This particular type of transistor with ambipolar behavior turns out to be useful for development of polymorphic electronics. Its notion tends to simplify design procedure of complex digital circuits and it may also bring an additional features for a given application scenario. In fact, this is helpful especially in those situations when it's necessary to change the target environment where the device with polymorphic circuit blocks is required to be operating. For example, a solar power plant control circuit will have a different functions during the daylight period and at night. The important characteristics is that its physical structure still remains to be the same. Above all, the impact of ambipolar property coupled with adoption of the emerging materials opens up a new direction for physical realization of the polymorphic building blocks.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20206 - Computer hardware and architecture

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings on UKSim-AMSS 8th European Modelling Symposium on Mathematical Modelling and Computer Simulation

ISBN

978-1-4799-7412-2

ISSN

—

e-ISSN

—

Počet stran výsledku

6

Strana od-do

513-518

Název nakladatele

IEEE Computer Society

Místo vydání

Pisa

Místo konání akce

Pisa

Datum konání akce

21. 10. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000411856100087