Vrstvy plazmového polymeru připravené v RF indukčně vázaném systému

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F04%3APU49369" target="_blank" >RIV/00216305:26310/04:PU49369 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Plasma polymer films prepared in RF inductive coupling system

Popis výsledku v původním jazyce

We would like to demonstrate a possibility to deposit plasma polymer films of high reproducibility and controlled physico-chemical properties. Plasma polymer films were prepared by plasma-enhanced chemical vapor deposition (PE CVD) employing an RF helical coupling system [1] operated at continuous or pulsed regime. The effective power (Weff) of pulsed plasma was controlled by changing the ratio of the time when plasma is switched on (ton) to the time when plasma is switched off (toff), Weff = Wtotal × tton/(ton+ toff), where Wtotal= 50 W. Vinyltriethoxysilane (VTES) was used as the monomer. Thin films were deposited on silicon wafers or special microscope slides without flaws pretreated by Ar plasma (10 sccm, 10 Pa, 25 W) for 10 min. Employing a mechanical manipulator the pretreated substrate was placed into the plasma zone after plasma reached the steady state monitored by mass spectroscopy. The film thickness was measured by a Profiler Talystep (Taylor-Hobson) or a spectroscopic phas

Název v anglickém jazyce

Plasma polymer films prepared in RF inductive coupling system

Popis výsledku anglicky

We would like to demonstrate a possibility to deposit plasma polymer films of high reproducibility and controlled physico-chemical properties. Plasma polymer films were prepared by plasma-enhanced chemical vapor deposition (PE CVD) employing an RF helical coupling system [1] operated at continuous or pulsed regime. The effective power (Weff) of pulsed plasma was controlled by changing the ratio of the time when plasma is switched on (ton) to the time when plasma is switched off (toff), Weff = Wtotal × tton/(ton+ toff), where Wtotal= 50 W. Vinyltriethoxysilane (VTES) was used as the monomer. Thin films were deposited on silicon wafers or special microscope slides without flaws pretreated by Ar plasma (10 sccm, 10 Pa, 25 W) for 10 min. Employing a mechanical manipulator the pretreated substrate was placed into the plasma zone after plasma reached the steady state monitored by mass spectroscopy. The film thickness was measured by a Profiler Talystep (Taylor-Hobson) or a spectroscopic phas

Druh

D - Stať ve sborníku

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

<a href="/cs/project/OC%20527.110" target="_blank" >OC 527.110: Tenké vrstvy plazmových polymerů připravené v RF indukčně vázaném systému</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. 3rd Joint Workgroup Meeting

ISBN

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ISSN

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e-ISSN

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Počet stran výsledku

3

Strana od-do

65-67

Název nakladatele

Neuveden

Místo vydání

Itálie

Místo konání akce

Sant Feliu de Guixol

Datum konání akce

11. 6. 2004

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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