Plazmové polymery připravené v indukčně vázaném RF výboji

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F05%3APU52373" target="_blank" >RIV/00216305:26310/05:PU52373 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Plasma polymer films prepared in RF inductive coupling system

Popis výsledku v původním jazyce

We would like to demonstrate a possibility to deposit plasma polymer films of high reproducibility and controlled physico-chemical properties. Plasma polymer films were prepared by plasma-enhanced chemical vapor deposition (PE CVD) employing an RF helical coupling system [1] operated at continuous or pulsed regime. The effective power (Weff) of pulsed plasma was controlled by changing the ratio of the time when plasma is switched on (ton) to the time when plasma is switched off (toff), Weff = Wtotal x tton/(ton+ toff), where Wtotal= 50 W. Vinyltriethoxysilane (VTES) was used as the monomer. Thin films were deposited on silicon wafers or special microscope slides without flaws pretreated by Ar plasma (10 sccm, 10 Pa, 25 W) for 10 min. Employing a mechanical manipulator the pretreated substrate was placed into the plasma zone after plasma reached the steady state monitored by mass spectroscopy. The film thickness was measured by a Profiler Talystep (Taylor-Hobson) or a spectroscopic phas

Název v anglickém jazyce

Plasma polymer films prepared in RF inductive coupling system

Popis výsledku anglicky

We would like to demonstrate a possibility to deposit plasma polymer films of high reproducibility and controlled physico-chemical properties. Plasma polymer films were prepared by plasma-enhanced chemical vapor deposition (PE CVD) employing an RF helical coupling system [1] operated at continuous or pulsed regime. The effective power (Weff) of pulsed plasma was controlled by changing the ratio of the time when plasma is switched on (ton) to the time when plasma is switched off (toff), Weff = Wtotal x tton/(ton+ toff), where Wtotal= 50 W. Vinyltriethoxysilane (VTES) was used as the monomer. Thin films were deposited on silicon wafers or special microscope slides without flaws pretreated by Ar plasma (10 sccm, 10 Pa, 25 W) for 10 min. Employing a mechanical manipulator the pretreated substrate was placed into the plasma zone after plasma reached the steady state monitored by mass spectroscopy. The film thickness was measured by a Profiler Talystep (Taylor-Hobson) or a spectroscopic phas

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CD - Makromolekulární chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemické listy (IF = 0.348)

ISSN

0009-2770

e-ISSN

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Svazek periodika

99

Číslo periodika v rámci svazku

09

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

2

Strana od-do

446-447

Kód UT WoS článku

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EID výsledku v databázi Scopus

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