Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F14%3APU110024" target="_blank" >RIV/00216305:26620/14:PU110024 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4892800" target="_blank" >http://dx.doi.org/10.1063/1.4892800</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4892800" target="_blank" >10.1063/1.4892800</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Popis výsledku v původním jazyce

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Název v anglickém jazyce

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Popis výsledku anglicky

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Review of Scientific Instruments

ISSN

0034-6748

e-ISSN

1089-7623

Svazek periodika

85

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

„083302-1“-„083302-5“

Kód UT WoS článku

000342913500019

EID výsledku v databázi Scopus

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