Preparation of GaN Nanocrystals with Single Ag Cores

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155540" target="_blank" >RIV/00216305:26620/24:PU155540 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/70883521:28110/24:63580162

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.cgd.4c00776" target="_blank" >10.1021/acs.cgd.4c00776</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of GaN Nanocrystals with Single Ag Cores

Popis výsledku v původním jazyce

We report on a low-temperature hybrid method for the preparation of GaN nanocrystals (NCs) with embedded single Ag cores. GaN growth is realized by a physical vapor deposition of Ga atoms on a SiO2 substrate with colloidal Ag nanoparticles on its surface, assisted with an ultralow energy (50 eV) nitrogen-ion-beam bombardment at temperatures being significantly lower (T < 350 degrees C) than in conventional GaN deposition techniques (e.g., MOCVD, 1000 degrees C). We call this method Low Temperature Droplet Epitaxy (LTDE). The low deposition temperature allows GaN nanocrystals to be prepared with embedded metal-aluminum colloidal nanoparticles as their cores. A combination of STEM, SEM, scanning Auger microscopy, XPS, and AFM was applied to characterize semiconductor and metal nanoparticles. By their implementation, we optimized morphology, structure, and chemical composition of these nanocrystals and, consequently, demonstrated their enhanced photoluminescent properties.

Název v anglickém jazyce

Preparation of GaN Nanocrystals with Single Ag Cores

Popis výsledku anglicky

We report on a low-temperature hybrid method for the preparation of GaN nanocrystals (NCs) with embedded single Ag cores. GaN growth is realized by a physical vapor deposition of Ga atoms on a SiO2 substrate with colloidal Ag nanoparticles on its surface, assisted with an ultralow energy (50 eV) nitrogen-ion-beam bombardment at temperatures being significantly lower (T < 350 degrees C) than in conventional GaN deposition techniques (e.g., MOCVD, 1000 degrees C). We call this method Low Temperature Droplet Epitaxy (LTDE). The low deposition temperature allows GaN nanocrystals to be prepared with embedded metal-aluminum colloidal nanoparticles as their cores. A combination of STEM, SEM, scanning Auger microscopy, XPS, and AFM was applied to characterize semiconductor and metal nanoparticles. By their implementation, we optimized morphology, structure, and chemical composition of these nanocrystals and, consequently, demonstrated their enhanced photoluminescent properties.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GA20-28573S" target="_blank" >GA20-28573S: Lokalizovaná plazmonicky zesílená absorpce v režimu silné vazby</a><br>

Návaznosti

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Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Crystal Growth and Design

ISSN

1528-7483

e-ISSN

1528-7505

Svazek periodika

24

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

7904-7909

Kód UT WoS článku

001311346100001

EID výsledku v databázi Scopus

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