Study of Layers of Metal Nanoparticles on Semiconductor Wafers for Hydrogen Detection

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190637" target="_blank" >RIV/68407700:21340/11:00190637 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/11:00374576

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Study of Layers of Metal Nanoparticles on Semiconductor Wafers for Hydrogen Detection

Popis výsledku v původním jazyce

In this work, colloid solutions of metal Pt, Pd and Pt/Pd alloy nanoparticles by reverse micelle technique in isooctane were prepared. Layers of the nanoparticles on InP and GaN substrates using electrophoretic deposition were prepared. Different coatingof semiconductor surface under different polarity of electrical field during electrophoretic deposition was investigated. Metal nanoparticles in the colloid and deposited metal nanoparticles were characterised by SEM. Schottky diodes were fabricated byapplication of colloidal graphite on nanoparticle layer. Diodes made with colloidal graphite exhibited better characteristics, than diodes with contacts made by other methods (evaporating, electrolysis). Diodes exhibited excellent current-voltage rectifying characteristics, the difference between forward and reverse current at 1 V was greather than 5 orders of magnitude. Schottky barier height of 1.03 eV was calculated for GaN-Pd structure and 0.78 eV for InP-Pd structure. A rapid increa

Název v anglickém jazyce

Study of Layers of Metal Nanoparticles on Semiconductor Wafers for Hydrogen Detection

Popis výsledku anglicky

In this work, colloid solutions of metal Pt, Pd and Pt/Pd alloy nanoparticles by reverse micelle technique in isooctane were prepared. Layers of the nanoparticles on InP and GaN substrates using electrophoretic deposition were prepared. Different coatingof semiconductor surface under different polarity of electrical field during electrophoretic deposition was investigated. Metal nanoparticles in the colloid and deposited metal nanoparticles were characterised by SEM. Schottky diodes were fabricated byapplication of colloidal graphite on nanoparticle layer. Diodes made with colloidal graphite exhibited better characteristics, than diodes with contacts made by other methods (evaporating, electrolysis). Diodes exhibited excellent current-voltage rectifying characteristics, the difference between forward and reverse current at 1 V was greather than 5 orders of magnitude. Schottky barier height of 1.03 eV was calculated for GaN-Pd structure and 0.78 eV for InP-Pd structure. A rapid increa

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2011 - Conference Proceedings

ISBN

978-80-87294-27-7

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

550-554

Název nakladatele

TANGER spol. s r.o.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

21. 9. 2011

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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