Resistive switching in TiO2 nanocolumn arrays electrochemically grown

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU121292" target="_blank" >RIV/00216305:26620/17:PU121292 - isvavai.cz</a>

Výsledek na webu

<a href="http://iopscience.iop.org/article/10.1088/1742-6596/829/1/012001" target="_blank" >http://iopscience.iop.org/article/10.1088/1742-6596/829/1/012001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1742-6596/829/1/012001" target="_blank" >10.1088/1742-6596/829/1/012001</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Resistive switching in TiO2 nanocolumn arrays electrochemically grown

Popis výsledku v původním jazyce

Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2 nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2 nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2 nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.

Název v anglickém jazyce

Resistive switching in TiO2 nanocolumn arrays electrochemically grown

Popis výsledku anglicky

Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2 nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2 nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2 nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Journal of Physics Conference Series

ISBN

—

ISSN

1742-6588

e-ISSN

1742-6596

Počet stran výsledku

6

Strana od-do

012001-012001

Název nakladatele

IOP Publishing

Místo vydání

BRISTOL, ENGLAND

Místo konání akce

Barcelona

Datum konání akce

9. 11. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000411623500001