Memristive switching in porous-alumina-assisted TiO2 nanocolumn arrays

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU126279" target="_blank" >RIV/00216305:26620/17:PU126279 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Memristive switching in porous-alumina-assisted TiO2 nanocolumn arrays

Popis výsledku v původním jazyce

Porous-anodic-alumina- (PAA-) assisted anodizing of valve metals like Ta, Nb, W, and Ti has been used for the formation of self-organized nanocolumn arrays of the corresponding metal oxide, vertically grown on a substrate and of various geometrical parameters [1]. On the way of exploring functional properties of PAA-assisted metal oxides (e.g. gas sensing, photoelectrochemical water splitting), a fundamental knowledge has recently been obtained of their electrical behavior, including resistive switching phenomena in the tungsten-oxide nanoarrays [2]. In the present work, we reveal, for the first time, the effect of memristive switching in TiO2 nanocolumn arrays grown via PAA-assisted anodizing of Ti layer prepared by magnetron sputtering. The TiO2 nanocolumn arrays were fabricated from Al (500 nm) on Ti (200 nm) layers, by anodizing the Al layer at 40 V resulting in formation of a PAA overlayer followed by re-anodizing of the Ti underlayer to 100 V resulting in ~150 nm long TiO2 nanocolumns embedded i

Název v anglickém jazyce

Memristive switching in porous-alumina-assisted TiO2 nanocolumn arrays

Popis výsledku anglicky

Porous-anodic-alumina- (PAA-) assisted anodizing of valve metals like Ta, Nb, W, and Ti has been used for the formation of self-organized nanocolumn arrays of the corresponding metal oxide, vertically grown on a substrate and of various geometrical parameters [1]. On the way of exploring functional properties of PAA-assisted metal oxides (e.g. gas sensing, photoelectrochemical water splitting), a fundamental knowledge has recently been obtained of their electrical behavior, including resistive switching phenomena in the tungsten-oxide nanoarrays [2]. In the present work, we reveal, for the first time, the effect of memristive switching in TiO2 nanocolumn arrays grown via PAA-assisted anodizing of Ti layer prepared by magnetron sputtering. The TiO2 nanocolumn arrays were fabricated from Al (500 nm) on Ti (200 nm) layers, by anodizing the Al layer at 40 V resulting in formation of a PAA overlayer followed by re-anodizing of the Ti underlayer to 100 V resulting in ~150 nm long TiO2 nanocolumns embedded i

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

<a href="/cs/project/GJ15-23005Y" target="_blank" >GJ15-23005Y: Vytváření a vlastnosti polí nanosloupků založených na TiO2 za využití anodické oxidace dopovaných vrstev titanu pomocí porézní aluminy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů