The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU130900" target="_blank" >RIV/00216305:26620/19:PU130900 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/pii/S0169433218330459?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433218330459?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2018.10.263" target="_blank" >10.1016/j.apsusc.2018.10.263</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning
Popis výsledku v původním jazyce
We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.
Název v anglickém jazyce
The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning
Popis výsledku anglicky
We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2019
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Svazek periodika
469
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
6
Strana od-do
747-752
Kód UT WoS článku
000454617200086
EID výsledku v databázi Scopus
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