The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning

Kód výsledku v IS VaVaI

RIV/00216305:26620/19:PU130900 - isvavai.cz

Výsledek na webu

https://www.sciencedirect.com/science/article/pii/S0169433218330459?via%3Dihub

DOI - Digital Object Identifier

10.1016/j.apsusc.2018.10.263

Jazyk výsledku

angličtina

Název v původním jazyce

The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning

Popis výsledku v původním jazyce

We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.

Název v anglickém jazyce

The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning

Popis výsledku anglicky

We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a material for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single-crystal Cu(1 0 0) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(1 0 0) with a 130-nm-thick Cu(1 0 0) buffer layer. The H-Si(1 0 0) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200 degrees C followed by adsorption of atomic hydrogen. The Cu(1 0 0) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in ultra-high vacuum. The films were consequently transformed in-situ by 4 keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused-ion-beam direct magnetic patterning.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

469

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

747-752

Kód UT WoS článku

000454617200086

EID výsledku v databázi Scopus

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