Growth of In2O3(111) thin films with optimized surfaces

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU133738" target="_blank" >RIV/00216305:26620/19:PU133738 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403" target="_blank" >https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevMaterials.3.103403" target="_blank" >10.1103/PhysRevMaterials.3.103403</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth of In2O3(111) thin films with optimized surfaces

Popis výsledku v původním jazyce

Indium oxide is widely employed in applications ranging from optoelectronics and gas sensing to catalysis, as well as in thin-film heterostructures. To probe the fundamentals of phenomena at the heart of In2O3-based devices that are tied to the intrinsic surface and interface properties of the material, well-defined single-crystalline In2O3 surfaces are needed. We report on how to grow atomically flat In2O3(111) thin films on yttria-stabilized zirconia substrates by pulsed laser deposition. The films are largely relaxed and reproduce the atomic-scale details of the surfaces of single crystals, except for line defects originating from the antiphase domain boundaries that form because of the one-on-four lattice match between the surface unit cells of In2O3(111) and of the substrate. While optimizing the growth conditions, we observe that the morphology of the films is ruled by the oxygen chemical potential, which determines the nature and diffusivity of adspecies during growth.

Název v anglickém jazyce

Growth of In2O3(111) thin films with optimized surfaces

Popis výsledku anglicky

Indium oxide is widely employed in applications ranging from optoelectronics and gas sensing to catalysis, as well as in thin-film heterostructures. To probe the fundamentals of phenomena at the heart of In2O3-based devices that are tied to the intrinsic surface and interface properties of the material, well-defined single-crystalline In2O3 surfaces are needed. We report on how to grow atomically flat In2O3(111) thin films on yttria-stabilized zirconia substrates by pulsed laser deposition. The films are largely relaxed and reproduce the atomic-scale details of the surfaces of single crystals, except for line defects originating from the antiphase domain boundaries that form because of the one-on-four lattice match between the surface unit cells of In2O3(111) and of the substrate. While optimizing the growth conditions, we observe that the morphology of the films is ruled by the oxygen chemical potential, which determines the nature and diffusivity of adspecies during growth.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICAL REVIEW MATERIALS

ISSN

2475-9953

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

103403-103403

Kód UT WoS článku

000489590000001

EID výsledku v databázi Scopus

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