The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU141352" target="_blank" >RIV/00216305:26620/21:PU141352 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007%2Fs10854-021-06589-9" target="_blank" >https://link.springer.com/article/10.1007%2Fs10854-021-06589-9</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-021-06589-9" target="_blank" >10.1007/s10854-021-06589-9</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

Popis výsledku v původním jazyce

Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.

Název v anglickém jazyce

The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

Popis výsledku anglicky

Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

32

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

20755-20766

Kód UT WoS článku

000673413000001

EID výsledku v databázi Scopus

2-s2.0-85111495033