The tuning of electrical performance of Au/(CuO:La)/n-Si photodiode with La doping
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU143754" target="_blank" >RIV/00216305:26620/20:PU143754 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/pii/S2468023020307422?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2468023020307422?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfin.2020.100750" target="_blank" >10.1016/j.surfin.2020.100750</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
The tuning of electrical performance of Au/(CuO:La)/n-Si photodiode with La doping
Popis výsledku v původním jazyce
In this study, CuO thin films are grown by spin coating method as a function of La doping on n-Si substrates. The morphological properties of thin films have been analyzed by AFM images, and it has been observed that the roughness of thin films have been decreased with increasing La dopant concentration. The surface topography and chemical composition of thin films have been studied by scanning electron microscopy (SEM) and energydispersive X-ray spectroscopy (EDS), respectively. Then, the electrical characteristics of the fabricated heterostructures have been measured and analyzed under dark and illumination condition. All diodes show rectification behavior and sensitivity to light. It has been observed that the series resistance and ideality factor values, which are among the basic parameters of the diodes, have been improved by La content. Detailed examination of the photoelectrical properties of photodetectors has revealed that the photoresponsivity and detectivity of Au/ (CuO:La)/n-Si have been significantly enhanced compared to the photodetector without La doped CuO. Results indicated that all structural and electrical parameters strongly depended on lanthanum concentration.
Název v anglickém jazyce
The tuning of electrical performance of Au/(CuO:La)/n-Si photodiode with La doping
Popis výsledku anglicky
In this study, CuO thin films are grown by spin coating method as a function of La doping on n-Si substrates. The morphological properties of thin films have been analyzed by AFM images, and it has been observed that the roughness of thin films have been decreased with increasing La dopant concentration. The surface topography and chemical composition of thin films have been studied by scanning electron microscopy (SEM) and energydispersive X-ray spectroscopy (EDS), respectively. Then, the electrical characteristics of the fabricated heterostructures have been measured and analyzed under dark and illumination condition. All diodes show rectification behavior and sensitivity to light. It has been observed that the series resistance and ideality factor values, which are among the basic parameters of the diodes, have been improved by La content. Detailed examination of the photoelectrical properties of photodetectors has revealed that the photoresponsivity and detectivity of Au/ (CuO:La)/n-Si have been significantly enhanced compared to the photodetector without La doped CuO. Results indicated that all structural and electrical parameters strongly depended on lanthanum concentration.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
SURFACES AND INTERFACES
ISSN
2468-0230
e-ISSN
—
Svazek periodika
21
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
10
Strana od-do
„100750-1“-„100750-10“
Kód UT WoS článku
000606824700009
EID výsledku v databázi Scopus
2-s2.0-85092939843