Ga interaction with ZnO surfaces: Diffusion and melt-back etching

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU143466" target="_blank" >RIV/00216305:26620/22:PU143466 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2022.152475" target="_blank" >https://doi.org/10.1016/j.apsusc.2022.152475</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2022.152475" target="_blank" >10.1016/j.apsusc.2022.152475</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ga interaction with ZnO surfaces: Diffusion and melt-back etching

Popis výsledku v původním jazyce

Despite being technologically very attractive, highly-doped zinc oxide whiskers with precisely defined morphology and doping level are difficult to prepare. Here, as an advancing step towards this goal, we show that pre-annealing of ZnO in oxygen-poor conditions (e.g. high vacuum) at low temperature encourages a deeper diffusion of Ga into the ZnO crystal lattice in contrast to ZnO pre-annealed in oxygen-rich conditions. We also demonstrate that gallium acts as a reactant causing ZnO etching at diffusion temperatures, contrary to Al-based doping of ZnO systems. This behaviour, being similar to gallium melt-back etching during GaN epitaxy on silicon, has not been observed for ZnO so far and can represent a significant hurdle for the post-growth diffusion doping of ZnO nanostructures. The paper suggests possible ways how to diminish this effect.

Název v anglickém jazyce

Ga interaction with ZnO surfaces: Diffusion and melt-back etching

Popis výsledku anglicky

Despite being technologically very attractive, highly-doped zinc oxide whiskers with precisely defined morphology and doping level are difficult to prepare. Here, as an advancing step towards this goal, we show that pre-annealing of ZnO in oxygen-poor conditions (e.g. high vacuum) at low temperature encourages a deeper diffusion of Ga into the ZnO crystal lattice in contrast to ZnO pre-annealed in oxygen-rich conditions. We also demonstrate that gallium acts as a reactant causing ZnO etching at diffusion temperatures, contrary to Al-based doping of ZnO systems. This behaviour, being similar to gallium melt-back etching during GaN epitaxy on silicon, has not been observed for ZnO so far and can represent a significant hurdle for the post-growth diffusion doping of ZnO nanostructures. The paper suggests possible ways how to diminish this effect.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

583

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

152475-152475

Kód UT WoS článku

000773634000003

EID výsledku v databázi Scopus

2-s2.0-85123215777