Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU149032" target="_blank" >RIV/00216305:26620/23:PU149032 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2468023023004881?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2468023023004881?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfin.2023.103118" target="_blank" >10.1016/j.surfin.2023.103118</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer

Popis výsledku v původním jazyce

The half-Heusler compounds exhibit simultaneous electrical, optical, and magnetic properties hence extensive research efforts have recently been dedicated to their development in diverse applications. Herein, we detail the fabrication and magnetic characterization of thin film ScPtBi was grown at 300 degrees C on Nb-buffered Si (100) single crystals (Nb/Si (100)) by using magnetron co-sputtering. X-ray diffraction examinations have unveiled the polycrystalline growth nature of the films. It is seen that the obtained ScPtBi thin film is strained by 1.4% compared to the single crystal of ScPtBi. The morphological observations, conducted by scanning electron mi-croscopy (SEM), revealed that the Nb buffer layer has a smooth and crack-free surface. Moreover, it has been observed that the Bi islands are formed on the surface of ScPtBi film, which is confirmed by the high-resolution scanning transmission electron microscopy (HR-STEM) analyses. The presence of the weak antilocalization (WAL) effect has been observed in the samples. The Hikami-Larkin-Nagaoka (HLN) equation was used to analyze experimental data, aiming to calculate the phase coherence length (l & phi;) and the coefficient & alpha;. As the temperature increased, the phase coherence length decreased from 39 nm to 24 nm. The coefficient & alpha; was determined to be in the range of 500 to 1100. As a result, it has been concluded that the presence of the WAL effect might be connected to the strong spin-orbit coupling (SOC) nature of the films instead of from topologically protected surface states.

Název v anglickém jazyce

Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer

Popis výsledku anglicky

The half-Heusler compounds exhibit simultaneous electrical, optical, and magnetic properties hence extensive research efforts have recently been dedicated to their development in diverse applications. Herein, we detail the fabrication and magnetic characterization of thin film ScPtBi was grown at 300 degrees C on Nb-buffered Si (100) single crystals (Nb/Si (100)) by using magnetron co-sputtering. X-ray diffraction examinations have unveiled the polycrystalline growth nature of the films. It is seen that the obtained ScPtBi thin film is strained by 1.4% compared to the single crystal of ScPtBi. The morphological observations, conducted by scanning electron mi-croscopy (SEM), revealed that the Nb buffer layer has a smooth and crack-free surface. Moreover, it has been observed that the Bi islands are formed on the surface of ScPtBi film, which is confirmed by the high-resolution scanning transmission electron microscopy (HR-STEM) analyses. The presence of the weak antilocalization (WAL) effect has been observed in the samples. The Hikami-Larkin-Nagaoka (HLN) equation was used to analyze experimental data, aiming to calculate the phase coherence length (l & phi;) and the coefficient & alpha;. As the temperature increased, the phase coherence length decreased from 39 nm to 24 nm. The coefficient & alpha; was determined to be in the range of 500 to 1100. As a result, it has been concluded that the presence of the WAL effect might be connected to the strong spin-orbit coupling (SOC) nature of the films instead of from topologically protected surface states.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

SURFACES AND INTERFACES

ISSN

2468-0230

e-ISSN

—

Svazek periodika

40

Číslo periodika v rámci svazku

103118

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

„“-„“

Kód UT WoS článku

001039896600001

EID výsledku v databázi Scopus

2-s2.0-85165257810