An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU144989" target="_blank" >RIV/00216305:26620/22:PU144989 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0025540821004931?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0025540821004931?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.materresbull.2021.111696" target="_blank" >10.1016/j.materresbull.2021.111696</a>

Jazyk výsledku

angličtina

Název v původním jazyce

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Popis výsledku v původním jazyce

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.

Název v anglickém jazyce

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Popis výsledku anglicky

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MATERIALS RESEARCH BULLETIN

ISSN

0025-5408

e-ISSN

1873-4227

Svazek periodika

149

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

„111696-1“-„111696-7“

Kód UT WoS článku

000780817200006

EID výsledku v databázi Scopus

2-s2.0-85121818242