Exploring the structural and optical properties of Ir-doped ZnO thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU150331" target="_blank" >RIV/00216305:26620/23:PU150331 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0925346723007516" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0925346723007516</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2023.114179" target="_blank" >10.1016/j.optmat.2023.114179</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring the structural and optical properties of Ir-doped ZnO thin films

Popis výsledku v původním jazyce

In this investigation, ZnO and Ir doped ZnO thin films were deposited on glass substrates by sol-gel spin coating technique. X-Ray diffraction study revealed that the obtained thin films possessed polycrystalline structure. The average crystallite size of ZIRO0, ZIRO2, and ZIRO6 thin films was 38 nm, 51 nm, and 43 nm, respectively. Structural parameters (lattice parameters, the volume of unit cell, atomic packing fraction, bond length, and dislocation density) of ZnO and Ir substituted ZnO thin films were determined. The unit cell's volume increased from 47.52 & ANGS;3 to 54.50 & ANGS;3 when the Ir dopant level became 6%. Moreover, the atomic packing fraction value also raised from 75.3% to 80.5% by increasing Ir doping. The morphological characteristics of the samples were studied by field emission scanning electron microscopy (FESEM). It is seen from those images that the diameters of the grains on the surface of the undoped ZnO thin film range roughly from 30 to 45 nm. On the other hand, the diameters of the grain sizes of the 2% Ir and 6% Ir doped ZnO thin films vary between 45 nm and 75 nm. The thickness of ZnO and Ir doped ZnO thin films was obtained from a cross-section of the FESEM image. The thickness value of undoped, 2% Ir doped, and 6% Ir doped ZnO thin films was found to be -512 nm, 350 nm, and 393.4 nm, respectively. X-ray photoelectron spectroscopy studies revealed the valence states of Zn and Ir as 2+ and 4+, respectively. The optical band gap of the thin films was determined by diffuse reflection spectroscopy. The optical band gap value of the studied thin films was determined using both Tauc's plots and Kubelka-Munk plots. While Tauc's plots showed that the optical bandgap of ZnO decreased from 3.28 eV to 3.21 eV with Ir substitution, Kubelka-Munk plots demonstrated that the optical bandgap of ZnO declined from 3.26 eV to 3.11 eV. In addition, diffuse reflectance spectroscopy was used to investigate various optical characteristics, including transm

Název v anglickém jazyce

Exploring the structural and optical properties of Ir-doped ZnO thin films

Popis výsledku anglicky

In this investigation, ZnO and Ir doped ZnO thin films were deposited on glass substrates by sol-gel spin coating technique. X-Ray diffraction study revealed that the obtained thin films possessed polycrystalline structure. The average crystallite size of ZIRO0, ZIRO2, and ZIRO6 thin films was 38 nm, 51 nm, and 43 nm, respectively. Structural parameters (lattice parameters, the volume of unit cell, atomic packing fraction, bond length, and dislocation density) of ZnO and Ir substituted ZnO thin films were determined. The unit cell's volume increased from 47.52 & ANGS;3 to 54.50 & ANGS;3 when the Ir dopant level became 6%. Moreover, the atomic packing fraction value also raised from 75.3% to 80.5% by increasing Ir doping. The morphological characteristics of the samples were studied by field emission scanning electron microscopy (FESEM). It is seen from those images that the diameters of the grains on the surface of the undoped ZnO thin film range roughly from 30 to 45 nm. On the other hand, the diameters of the grain sizes of the 2% Ir and 6% Ir doped ZnO thin films vary between 45 nm and 75 nm. The thickness of ZnO and Ir doped ZnO thin films was obtained from a cross-section of the FESEM image. The thickness value of undoped, 2% Ir doped, and 6% Ir doped ZnO thin films was found to be -512 nm, 350 nm, and 393.4 nm, respectively. X-ray photoelectron spectroscopy studies revealed the valence states of Zn and Ir as 2+ and 4+, respectively. The optical band gap of the thin films was determined by diffuse reflection spectroscopy. The optical band gap value of the studied thin films was determined using both Tauc's plots and Kubelka-Munk plots. While Tauc's plots showed that the optical bandgap of ZnO decreased from 3.28 eV to 3.21 eV with Ir substitution, Kubelka-Munk plots demonstrated that the optical bandgap of ZnO declined from 3.26 eV to 3.11 eV. In addition, diffuse reflectance spectroscopy was used to investigate various optical characteristics, including transm

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

OPTICAL MATERIALS

ISSN

0925-3467

e-ISSN

1873-1252

Svazek periodika

143

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

„“-„“

Kód UT WoS článku

001051291700001

EID výsledku v databázi Scopus

2-s2.0-85166618732