Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU150729" target="_blank" >RIV/00216305:26620/23:PU150729 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/23:00578172

Výsledek na webu

<a href="https://pubs.aip.org/aip/jap/article/134/19/195704/2921456/Recombination-activity-of-threading-dislocations" target="_blank" >https://pubs.aip.org/aip/jap/article/134/19/195704/2921456/Recombination-activity-of-threading-dislocations</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0171937" target="_blank" >10.1063/5.0171937</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Popis výsledku v původním jazyce

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations with different recombination rates of electron-hole pairs. Here, we investigate types and distributions of threading dislocations of the MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading dislocations were nearly recombination-inactive.

Název v anglickém jazyce

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Popis výsledku anglicky

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations with different recombination rates of electron-hole pairs. Here, we investigate types and distributions of threading dislocations of the MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading dislocations were nearly recombination-inactive.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

134

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

„“-„“

Kód UT WoS článku

001104753900015

EID výsledku v databázi Scopus

2-s2.0-85177601738