Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00510565" target="_blank" >RIV/68081723:_____/19:00510565 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/19:PU132590

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201900279" target="_blank" >https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201900279</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201900279" target="_blank" >10.1002/pssb.201900279</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Popis výsledku v původním jazyce

Epitaxial growth of polar GaN is frequently made on AlN/Si substrates that contain a large density of threading dislocations induced by the mismatch of their lattice parameters and thermal expansion coefficients. In this paper, the structural and electrical properties of surface and extended defects found in 220 nm {0001} AlN films grown epitaxially on {111} oriented Si substrate by metalorganic chemical vapor deposition are characterized. Three types of surface depressions are recognized by atomic force microscopy (AFM) that correspond to V-defects and their clusters and individual threading dislocations. Transmission electron microscopy studies prove that all V-defects are attached to threading screw or mixed-type threading dislocations. The electrical activity of the defects in the AlN film is assessed by measuring the electron beam induced current (EBIC) across Au/Ni/AlN Schottky barrier. The largest drop of EBIC compared to defect-free regions is observed at clusters of V-defects, which have a low density of (2.4 ± 0.4) × 107 cm−2. Only a very weak drop of EBIC is found at isolated threading dislocations, which have much higher density compared to clusters of V-defects. Considering the defects studied, the electrical properties of AlN films are primarily affected by threading dislocations, despite the relatively weak recombination efficiency of individual dislocations.

Název v anglickém jazyce

Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Popis výsledku anglicky

Epitaxial growth of polar GaN is frequently made on AlN/Si substrates that contain a large density of threading dislocations induced by the mismatch of their lattice parameters and thermal expansion coefficients. In this paper, the structural and electrical properties of surface and extended defects found in 220 nm {0001} AlN films grown epitaxially on {111} oriented Si substrate by metalorganic chemical vapor deposition are characterized. Three types of surface depressions are recognized by atomic force microscopy (AFM) that correspond to V-defects and their clusters and individual threading dislocations. Transmission electron microscopy studies prove that all V-defects are attached to threading screw or mixed-type threading dislocations. The electrical activity of the defects in the AlN film is assessed by measuring the electron beam induced current (EBIC) across Au/Ni/AlN Schottky barrier. The largest drop of EBIC compared to defect-free regions is observed at clusters of V-defects, which have a low density of (2.4 ± 0.4) × 107 cm−2. Only a very weak drop of EBIC is found at isolated threading dislocations, which have much higher density compared to clusters of V-defects. Considering the defects studied, the electrical properties of AlN films are primarily affected by threading dislocations, despite the relatively weak recombination efficiency of individual dislocations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

256

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

1900279

Kód UT WoS článku

000503261600032

EID výsledku v databázi Scopus

2-s2.0-85068517723