Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU132237" target="_blank" >RIV/00216305:26620/19:PU132237 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.7567/1347-4065/ab0d00/meta" target="_blank" >https://iopscience.iop.org/article/10.7567/1347-4065/ab0d00/meta</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.7567/1347-4065/ab0d00" target="_blank" >10.7567/1347-4065/ab0d00</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

Popis výsledku v původním jazyce

An AlN buffer layer allows epitaxial growth of GaN on silicon substrates. We have studied the early AlN nucleation stage performed at high and low process temperatures. We show that the temperature has a crucial effect on the chemical reactions on the Si substrate during the initial growth stage. We have observed that large clustered defects are formed at 1000 °C. These defects are responsible for degradation of the vertical leakage current (VLC) blocking capability of the buffer layer. Formation of the defects is prevented if the temperature is lowered to 800 °C, which is explained by a carbonization of the Si surface. Formation of the SiC interlayer leads to the stable AlN/Si(111) interface during subsequent hightemperature growth of the buffer structure. We demonstrate that very low VLCs in superlattice-based buffer are achieved using the lowtemperature nucleation process, which makes it suitable for fabrication of high voltage AlGaN/GaN high electron mobility transistor devices.

Název v anglickém jazyce

Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

Popis výsledku anglicky

An AlN buffer layer allows epitaxial growth of GaN on silicon substrates. We have studied the early AlN nucleation stage performed at high and low process temperatures. We show that the temperature has a crucial effect on the chemical reactions on the Si substrate during the initial growth stage. We have observed that large clustered defects are formed at 1000 °C. These defects are responsible for degradation of the vertical leakage current (VLC) blocking capability of the buffer layer. Formation of the defects is prevented if the temperature is lowered to 800 °C, which is explained by a carbonization of the Si surface. Formation of the SiC interlayer leads to the stable AlN/Si(111) interface during subsequent hightemperature growth of the buffer structure. We demonstrate that very low VLCs in superlattice-based buffer are achieved using the lowtemperature nucleation process, which makes it suitable for fabrication of high voltage AlGaN/GaN high electron mobility transistor devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Japanese Journal of Applied Physics

ISSN

0021-4922

e-ISSN

1347-4065

Svazek periodika

58

Číslo periodika v rámci svazku

SC

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

9

Strana od-do

„SC1018-1“-„SC1018-9“

Kód UT WoS článku

000474911400025

EID výsledku v databázi Scopus

—