Direct visualization and 3D reconstruction of conductive filaments in aSiO₂ material-based memristive device

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU151506" target="_blank" >RIV/00216305:26620/24:PU151506 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlelanding/2024/cp/d4cp00274a" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2024/cp/d4cp00274a</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d4cp00274a" target="_blank" >10.1039/d4cp00274a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Direct visualization and 3D reconstruction of conductive filaments in aSiO₂ material-based memristive device

Popis výsledku v původním jazyce

Observation of conductive filaments has greatly aided the development of theoretical models of memristive devices. In this work, we visualized and reconstructed the conductive filaments in a Cu/Cu-doped SiO2/W device employing a focused ion beam (FIB) as a milling technique. The SEM images taken from the device after 150 DC sweep cycles showed that Joule heat played a vital role in determining the morphology of a conductive filament, where the vaporization of the conductive filament resulted in the creation of defects, including particles, voids, and cavities. The competition between the formation and vaporization of conductive filaments generally induces a remarkable current fluctuation. Since Cu-doped SiO2 was utilized as the electrolyte, the vapors exfoliated adjacent single layers. FIB milling proceeded in top-down and front-back modes; thus, a 3D model of conductive filaments and defects was constructed according to a series of FIB-SEM images. This methodology is promising for a future failure analysis of memristive devices.

Název v anglickém jazyce

Direct visualization and 3D reconstruction of conductive filaments in aSiO₂ material-based memristive device

Popis výsledku anglicky

Observation of conductive filaments has greatly aided the development of theoretical models of memristive devices. In this work, we visualized and reconstructed the conductive filaments in a Cu/Cu-doped SiO2/W device employing a focused ion beam (FIB) as a milling technique. The SEM images taken from the device after 150 DC sweep cycles showed that Joule heat played a vital role in determining the morphology of a conductive filament, where the vaporization of the conductive filament resulted in the creation of defects, including particles, voids, and cavities. The competition between the formation and vaporization of conductive filaments generally induces a remarkable current fluctuation. Since Cu-doped SiO2 was utilized as the electrolyte, the vapors exfoliated adjacent single layers. FIB milling proceeded in top-down and front-back modes; thus, a 3D model of conductive filaments and defects was constructed according to a series of FIB-SEM images. This methodology is promising for a future failure analysis of memristive devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Chemistry Chemical Physics

ISSN

1463-9076

e-ISSN

1463-9084

Svazek periodika

26

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

10069-10077

Kód UT WoS článku

001184940300001

EID výsledku v databázi Scopus

2-s2.0-85187674804