Large-scale synthesis of defect-free phosphorene on nickel substrates: enabling atomistic thickness devices
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU151915" target="_blank" >RIV/00216305:26620/24:PU151915 - isvavai.cz</a>
Výsledek na webu
<a href="https://iopscience.iop.org/article/10.1088/1361-6463/ad61f7" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6463/ad61f7</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/ad61f7" target="_blank" >10.1088/1361-6463/ad61f7</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Large-scale synthesis of defect-free phosphorene on nickel substrates: enabling atomistic thickness devices
Popis výsledku v původním jazyce
Addressing the main challenges of defect-free, large-scale synthesis of low-dimensional materials composed of phosphorus atoms is essential for advancing promising phosphorene-based technologies. Using molecular dynamics simulation, we demonstrate the large-scale and defect-free synthesis of phosphorene on Nickel (Ni) substrates. We showed that substrate orientation is crucial in the controllable synthesis of different phosphorene allotropes. Specifically, blue phosphorene was successfully grown on Ni (111) and Ni (100) surfaces, while gamma-phosphorene, referred to here as Navy phosphorene, was grown on Ni (110). In addition, temperature control (high temperature) and cooling rate (slow cooling) are also crucial in the formation of P6 hexagons. Finally, we report that the phosphorus pentamers (P5) are the essential precursor for phosphorene synthesis. This work provides a robust framework for understanding and controlling the synthesis of large-area, single-crystalline monolayer phosphorene.
Název v anglickém jazyce
Large-scale synthesis of defect-free phosphorene on nickel substrates: enabling atomistic thickness devices
Popis výsledku anglicky
Addressing the main challenges of defect-free, large-scale synthesis of low-dimensional materials composed of phosphorus atoms is essential for advancing promising phosphorene-based technologies. Using molecular dynamics simulation, we demonstrate the large-scale and defect-free synthesis of phosphorene on Nickel (Ni) substrates. We showed that substrate orientation is crucial in the controllable synthesis of different phosphorene allotropes. Specifically, blue phosphorene was successfully grown on Ni (111) and Ni (100) surfaces, while gamma-phosphorene, referred to here as Navy phosphorene, was grown on Ni (110). In addition, temperature control (high temperature) and cooling rate (slow cooling) are also crucial in the formation of P6 hexagons. Finally, we report that the phosphorus pentamers (P5) are the essential precursor for phosphorene synthesis. This work provides a robust framework for understanding and controlling the synthesis of large-area, single-crystalline monolayer phosphorene.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
—
Návaznosti
R - Projekt Ramcoveho programu EK
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physics D - Applied Physics
ISSN
0022-3727
e-ISSN
1361-6463
Svazek periodika
57
Číslo periodika v rámci svazku
43
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
9
Strana od-do
„“-„“
Kód UT WoS článku
001284780800001
EID výsledku v databázi Scopus
2-s2.0-85200381828