Single- vs dual-source vapor deposition of inorganic halide perovskites: A case study of CsPbBr<sub>3</sub>
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0198139" target="_blank" >RIV/00216305:26620/26:0198139 - isvavai.cz</a>
Výsledek na webu
<a href="https://pubs.aip.org/aip/apm/article/13/3/031118/3340729/Single-vs-dual-source-vapor-deposition-of" target="_blank" >https://pubs.aip.org/aip/apm/article/13/3/031118/3340729/Single-vs-dual-source-vapor-deposition-of</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0242134" target="_blank" >10.1063/5.0242134</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Single- vs dual-source vapor deposition of inorganic halide perovskites: A case study of CsPbBr<sub>3</sub>
Popis výsledku v původním jazyce
Inorganic halide perovskites have become attractive for many optoelectronic applications due to their outstanding properties. While chemical synthesis techniques have been successful in producing high-quality perovskite crystals, scaling up to wafer-scale thin films remains challenging. Vapor deposition methods, particularly physical vapor deposition and chemical vapor deposition, have emerged as potential solutions for large-scale thin film fabrication. However, the control of phase purity during deposition remains problematic. Here, we investigate single-source (CsPbBr3) and dual-source (CsBr and PbBr2) physical vapor deposition techniques with the aim of achieving phase-pure CsPbBr3 thin films. Utilizing Knudsen effusion mass spectrometry, we demonstrate that while the single-source CsPbBr3 evaporation is partially congruent, it leads to compositional changes in the evaporant over time. The dual-source evaporation, with a precise control of the PbBr2/CsBr flux ratio, can improve phase purity, particularly at elevated substrate temperatures under excess PbBr2 conditions. Our results give direct evidence that the growth is CsBr-limited. Overall, our findings provide critical insights into the vapor phase deposition processes, highlighting the importance of evaporation conditions in achieving the desired inorganic perovskite stoichiometry and morphology. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Název v anglickém jazyce
Single- vs dual-source vapor deposition of inorganic halide perovskites: A case study of CsPbBr<sub>3</sub>
Popis výsledku anglicky
Inorganic halide perovskites have become attractive for many optoelectronic applications due to their outstanding properties. While chemical synthesis techniques have been successful in producing high-quality perovskite crystals, scaling up to wafer-scale thin films remains challenging. Vapor deposition methods, particularly physical vapor deposition and chemical vapor deposition, have emerged as potential solutions for large-scale thin film fabrication. However, the control of phase purity during deposition remains problematic. Here, we investigate single-source (CsPbBr3) and dual-source (CsBr and PbBr2) physical vapor deposition techniques with the aim of achieving phase-pure CsPbBr3 thin films. Utilizing Knudsen effusion mass spectrometry, we demonstrate that while the single-source CsPbBr3 evaporation is partially congruent, it leads to compositional changes in the evaporant over time. The dual-source evaporation, with a precise control of the PbBr2/CsBr flux ratio, can improve phase purity, particularly at elevated substrate temperatures under excess PbBr2 conditions. Our results give direct evidence that the growth is CsBr-limited. Overall, our findings provide critical insights into the vapor phase deposition processes, highlighting the importance of evaporation conditions in achieving the desired inorganic perovskite stoichiometry and morphology. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
21001 - Nano-materials (production and properties)
Návaznosti výsledku
Projekt
<a href="/cs/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Kvantové materiály pro aplikace v udržitelných technologiích</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
APL Materials
ISSN
2166-532X
e-ISSN
—
Svazek periodika
13
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
10
Strana od-do
—
Kód UT WoS článku
001457916400002
EID výsledku v databázi Scopus
2-s2.0-105001397829